2009 | "Characterization of FePt film electrodeposited with a ferric electrol…
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Title : Characterization of FePt film electrodeposited with a ferric electrolyte
Authors: Serhiy Cherevko, Jie Fe, Ki Youn Song, and Chan-Hwa Chung
Journal : Korean Journal of Chemicla Engineering
Vol/No/Page : 26/6/1766-1769
DOI : 10.1007/s11814-009-0244-1
Abstract :
The electrodeposition of FePt alloy film in a novel ferric electrolyte that could be an alternative electrolyte to the usual non-stable baths was investigated. The influence of the applied current density and electrolyte temperature on the composition of the alloy was studied. It was found that co-deposition of oxygen can be reduced by deposition at higher temperature of 65 degrees C than room temperature. The as-deposited film had a face-centered cubic (gamma-Fe,Pt) structure, and after an additional annealing process, the structure was changed to a face-centered tetragonal structure. The as-deposited FePt film also shows good resistance to corrosion and its coercivity was about 0.1 T, which makes it suitable for use in applications compatible with silicon technology.
Authors: Serhiy Cherevko, Jie Fe, Ki Youn Song, and Chan-Hwa Chung
Journal : Korean Journal of Chemicla Engineering
Vol/No/Page : 26/6/1766-1769
DOI : 10.1007/s11814-009-0244-1
Abstract :
The electrodeposition of FePt alloy film in a novel ferric electrolyte that could be an alternative electrolyte to the usual non-stable baths was investigated. The influence of the applied current density and electrolyte temperature on the composition of the alloy was studied. It was found that co-deposition of oxygen can be reduced by deposition at higher temperature of 65 degrees C than room temperature. The as-deposited film had a face-centered cubic (gamma-Fe,Pt) structure, and after an additional annealing process, the structure was changed to a face-centered tetragonal structure. The as-deposited FePt film also shows good resistance to corrosion and its coercivity was about 0.1 T, which makes it suitable for use in applications compatible with silicon technology.